<a href="http://www.fivergroup.com/">uv ballast</a> Using atomically controlled thin monolayers of gallium nitride (GaN) and aluminum nitride (AIN) as active regions, an exploration group shows the ability to generate deep-UV emission through an LED between 232- and 270-nm wavelengths. Currently, most deep-UV lamps are mercury-based and they are bulky and inefficient. A deep-UV LED offers a smaller, more eco-friendly replacement for a mercury lamp.

Researchers at Cornell University, in addition to collaborators in the University of Notre Dame, achieved electrically injected deep UV emission using monolayer thin GaN/AlN quantum structures as active regions; and tuned the emission wavelength by manipulating the thickness of ultrathin GaN layers using plasma assisted molecular beam epitaxy. In experiments the c's achieved single peaked emission spectra with narrow full width at half maximum for three different LEDs operating at 232, 246 and 270 nm. The team believes that 232 nm (5.34 eV) will be the shortest electroluminescence emission wavelength reported up to now using GaN as
the light emitting material.

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